Front Cover; Very High Speed Integrated Circuits: Gallium Arsenide LSI; Copyright Page; Contents; List of Contributors; Preface; Chapter 1. Active Layer Formation by Ion Implantation; List of Symbols; I. Introduction; ll. Furnace Annealing; lll. Rapid Thermal Annealing; References; Chapter 2. Focused Ion Beam Implantation Technology; I. Introduction; ll. Implanter; lll. FIB Implants; IV. Compositional Disordering of GaAs-AlGaAs; V. FIB-Doping MBE Growth; VI. Prospect of FIB Technology; References; Chapter 3. Device Fabrication Process Technology; l. Introduction.

Ll. Fundamental Process Technologieslll. Self-Aligned MESFET Technology; IV. Device Technology Effective for Improving Characteristics in Submicron Gate MESFETs; V. Summary; References; Chapter 4. GaAs LSI Circuit Design; I. Introduction; Il. Device Analysis; lll. FET Model; IV. Other Elements; V. Basic Circuit Configurations; Vl. LSI Design; VII. Testing Technology; VIII. Summary; References; Chapter 5. GaAs LSI Fabrication and Performance; I. Introduction; Il. Characterization of Semi-insulating GaAs Wafers for IC Application.

Ill. TEG Selection for LSI Fabrication Process and Chip/Wafer LayoutIV. FET Fabrication and Performance for LSls; V. Circuit Elements and Interconnection; VI. Assembly Techniques and Packaging; VII. LSI Fabrication and Performance; VIII. Summary and Future Trends; References; Index; Contents of Previous Volumes.