Front Cover; Solid State Physics; Copyright Page; Contents; Contributors to Volume 11; Preface; Contents of Previous Volumes; Articles Planned for Future Volumes; Chapter 1. Semiconducting Properties of Gray Tin; I. Introduction; II. The a-ß Transition of Tin; III. Preparation of Gray Tin Specimens; IV. General Physical Properties; V. Semiconducting Properties; VI. Conclusions; Chapter 2. Physics at High Pressure; I. Introduction; II. Experimental Methods; III. Results; Chapter 3. The Effects of Elastic Deformation on the Electrical Conductivity of Semiconductors; I. Introduction.

II. Phenomenological Description of Resistance and PiezoresistanceIII. Messurement of Piezoresistance; IV. Properties of Semiconductors; V. The Effects of Hydrostatic Pressure; VI. The Effects of Shear Strain; VII. Related Phenomena; Chapter 4. Imperfection Ionization Energies in CdS-Type Materials by Photoelectronic Techniques; I. Imperfections in Insulators; II. Photoelectronic Techniques Applied to CdS-Type Materials; III. Trends in the Ionization Energies in CdS-Type Materials; IV. Indications of Complex Ionization Processes; Chapter 5. Cyclotron Resonance; I. Introduction.

II. Cyclotron Resonance of Free Charged ParticlesIII. Cyclotron Resonance of Carriers in Solids; IV. New Developments; V. Summary and Future Prospects; Author Index; Subject Index; Cumulative Topical Index for Volumes 1 to 10.