Front Cover; High Speed Heterostructure Devices; Copyright Page; Contents; List of Contributors; Preface; Chapter 1. Quantum Electron Devices: Physics and Applications; I. Introduction; II. Resontant-Tunneling Diodes; III. Resonant Tunneling Bipolar Transistors (RTBTs) with Double Barrier in the Base; IV. Devices with Multiple-Peak I-V Characteristics and Multiple-State RTBTs; V. Circuit Applications; VI. Unipolar Resonant Tunneling Transistors; VII. Superlattice Transport and Quantum Reflections; VIII. Field-Induced Localization in Vertical and Parallel Transport; Acknowledgments; References.

Chapter 2. GaAs-Gate Semiconductor-Insulator-Semiconductor FETI. Introduction-Basic Principles; II. History and Development of SISFETs and Related Devices; III. SIS Capacitors; IV. Design of Vertical Structure; V. Processing Issues; VI. FET Characteristics; VII. SISFET Modeling; VIII. Circuit Results; IX. Discussion and Future Perspective; Acknowledgments; References; Chapter 3. Unipolar InP-Based Transistors; I. Introduction; II. Growth of InP-Based Structures; III. InP Field Effect Transistors (FETs); IV. High Electron Mobility Transistors (HEMTs); V. Summary; VI. Acknowledgments.

V. Nonequilibrium Electron Transport in HBTsVI. Device Characteristics and Limiting Factors; VII. Implementation of HBTs in Integrated Circuits; VIII. Summary and Prospects; References; Chapter 6. High-Frequency Resonant-Tunneling Devices; I. Introduction; II. Times in Resonant Tunneling; III. High-Frequency Applications; IV. Future Expectations; Acknowledgments; References; List of Variables; Chapter 7. Resonant-Tunneling Hot-Electron Transistors and Circuits; I. Introduction; II. Hot Electron Transport in RHETs; III. RHET dc and Microwave Characteristics; IV. RHET Circuit Applications.

V. RHET Room-Temperature OperationVI. Summary; Acknowledgment; References; Index; Contents of Volumes in This Series.