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      Format: 
      Excerpt: 
      Transistor circuits.
      by 
      International Symposium on Silicon Molecular Beam Epitaxy (3rd : 1989 : Strasbourg, France)
      Format: 
      Excerpt: 
      processing: growth of Si/Si<INF>1-x</INF>Ge<INF>x</INF> for heterojunction bipolar transistor applications (J