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      by 
      Rashid, M. H.
      Format: 
      Excerpt: 
      factor correction circuits Chapter 20 -- Gate drive circuitry for power converters Chapter 21 -- Power
      by 
      International Symposium on Silicon Molecular Beam Epitaxy (3rd : 1989 : Strasbourg, France)
      Format: 
      Excerpt: 
      processing: growth of Si/Si<INF>1-x</INF>Ge<INF>x</INF> for heterojunction bipolar transistor applications (J
      by 
      Rashid, M. H.
      Format: 
      Excerpt: 
      factor correction circuits Chapter 20 -- Gate drive circuitry for power converters Chapter 21 -- Power
      by 
      Allen, P. E. (Phillip E.)
      Format: 
      Excerpt: 
      Semiconductor Fabrication Processes -- 2.2 The PN Junction -- 2.3 The MOS Transistor -- 2.4 Passive Components