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University of California, Los Angeles. Electrical Engineering 0303. degree granting institution.

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Cornell University. Electrical & Computer Engrng. degree granting institution.

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Purdue University. Electrical and Computer Engineering. degree granting institution.

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Hong Kong University of Science and Technology (Hong Kong). degree granting institution.

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The University of Texas at El Paso. Computational Science. degree granting institution.

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California State University, Fullerton. Computer Engineering. degree granting institution.

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California State University, Long Beach. Electrical Engineering. degree granting institution.

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Chen, Tao, author.

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Chen, Yihan, author.

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Chittamuru, Sai Vineel Reddy, author.

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Colorado State University. Electrical and Computer Engineering. degree granting institution.

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Famili, Azadeh G., author.

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Freewan, Ibrahim, author.

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Gao, Min, author.

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Ham, Tae Jun, author.

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Hamdan, Muhammad K.A., author.

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Hau, William, author.

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Hossen, Tareq, author.

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Iowa State University. Electrical and Computer Engineering. degree granting institution.

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Klaassen, W.K. Umayanganie, author.

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Li, Mingda, author. (orcid)0000-0002-0494-3853

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Li, Xiang, author.

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Lopez, Henry R. Moncada, author.

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Luo, Tianqiong, author.

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Michigan Technological University. Electrical & Computer Engineering. degree granting institution.

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Princeton University. Electrical Engineering. degree granting institution.

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Qiu, Liang, author.

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Raval, Rizu, author.

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Schoeny, Clayton Maxwell, author.

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Shao, Qiming, author.

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Sharma, Ankit, author.

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Song, Yang, author.

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The University of Mississippi. Electrical Engineering. degree granting institution.

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The University of North Dakota. Electrical Engineering. degree granting institution.

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University of California, Los Angeles. Electrical and Computer Engineering. degree granting institution.

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University of California, San Diego. Electrical and Computer Engineering. degree granting institution.

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University of New Hampshire. Electrical and Computer Engineering. degree granting institution.

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Wang, Chao, author. (orcid)0000-0003-4888-4565

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Xiao, Zuguang, author.

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Yu, Tianhe, author.

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Zhang, Peng, author.

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Zhang, Zhiming, author.

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Zhao, Xueqian, author.

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Cover image for Modeling Interface Engineered Phase-Change Memory Cell

Modeling Interface Engineered Phase-Change Memory Cell

1.

Modeling Interface Engineered Phase-Change Memory Cell

by

Chen, Yihan, author.

http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqm&rft_dat=xri:pqdiss:10903312

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Excerpt:

Modeling Interface Engineered Phase-Change Memory Cell / Chen, Yihan, author.

Cover image for On Quality-of-Service and Memory Efficiency in Heterogeneous MPSoCs

On Quality-of-Service and Memory Efficiency in Heterogeneous MPSoCs

2.

On Quality-of-Service and Memory Efficiency in Heterogeneous MPSoCs

by

Song, Yang, author.

http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqm&rft_dat=xri:pqdiss:13807034

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Excerpt:

On Quality-of-Service and Memory Efficiency in Heterogeneous MPSoCs / Song, Yang, author.

Cover image for Magnetic Memory with Topological Insulators and Ferrimagnetic Insulators

Magnetic Memory with Topological Insulators and Ferrimagnetic Insulators

3.

Magnetic Memory with Topological Insulators and Ferrimagnetic Insulators

by

Shao, Qiming, author.

http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqm&rft_dat=xri:pqdiss:13810304

Format:

Excerpt:

Magnetic Memory with Topological Insulators and Ferrimagnetic Insulators / Shao, Qiming, author.

Cover image for Spintronic-based Logic-in-Memory Computation for Energyaware Neuromorphic System

Spintronic-based Logic-in-Memory Computation for Energyaware Neuromorphic System

4.

Spintronic-based Logic-in-Memory Computation for Energyaware Neuromorphic System

by

Famili, Azadeh G., author.

http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqm&rft_dat=xri:pqdiss:10808989

Format:

Excerpt:

Spintronic-based Logic-in-Memory Computation for Energyaware Neuromorphic System / Famili, Azadeh G

Cover image for Non-linguistic Vocalization Recognition Based on Convolutional, Long Short-term Memory, Deep Neural Networks

Non-linguistic Vocalization Recognition Based on Convolutional, Long Short-term Memory, Deep Neural Networks

5.

Non-linguistic Vocalization Recognition Based on Convolutional, Long Short-term Memory, Deep Neural Networks

by

Qiu, Liang, author.

http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqm&rft_dat=xri:pqdiss:10829436

Format:

Excerpt:

Non-linguistic Vocalization Recognition Based on Convolutional, Long Short-term Memory, Deep Neural

Cover image for Data Access Optimization in Accelerator-oriented Heterogeneous Architecture through Decoupling and Memory Hierarchy Specialization

Data Access Optimization in Accelerator-oriented Heterogeneous Architecture through Decoupling and Memory Hierarchy Specialization

6.

Data Access Optimization in Accelerator-oriented Heterogeneous Architecture through Decoupling and Memory Hierarchy Specialization

by

Ham, Tae Jun, author.

http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqm&rft_dat=xri:pqdiss:10822487

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Excerpt:

Memory Hierarchy Specialization / Ham, Tae Jun, author.

Cover image for Fabrication of Organic Ferroelectric Memory by Friction-Transfer Method

Fabrication of Organic Ferroelectric Memory by Friction-Transfer Method

7.

Fabrication of Organic Ferroelectric Memory by Friction-Transfer Method

by

Hau, William, author.

http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqm&rft_dat=xri:pqdiss:10903335

Format:

Excerpt:

Fabrication of Organic Ferroelectric Memory by Friction-Transfer Method / Hau, William, author.

Cover image for Tunnel Field Effect Transistors: From Theory to Applications

Tunnel Field Effect Transistors: From Theory to Applications

8.

Tunnel Field Effect Transistors: From Theory to Applications

by

Li, Mingda, author. (orcid)0000-0002-0494-3853

http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqm&rft_dat=xri:pqdiss:10822280

Format:

Excerpt:

The performance of computing systems has been increasingly choked by power consumption and memory

Cover image for Smart Writing of Programmable Metallization Cell

Smart Writing of Programmable Metallization Cell

9.

Smart Writing of Programmable Metallization Cell

by

Raval, Rizu, author.

http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqm&rft_dat=xri:pqdiss:10786883

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Excerpt:

above. Such features are unique among prevailing memory controllers and reduce the energy consumption of

Cover image for Analysis of High Performance Scientific Programming Workflows

Analysis of High Performance Scientific Programming Workflows

10.

Analysis of High Performance Scientific Programming Workflows

by

Klaassen, W.K. Umayanganie, author.

http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqm&rft_dat=xri:pqdiss:10825859

Format:

Excerpt:

the hardware performance such as speed and memory bottlenecks contributes less to the overall

Cover image for Coding for Future Large-Scale Data Systems

Coding for Future Large-Scale Data Systems

11.

Coding for Future Large-Scale Data Systems

by

Schoeny, Clayton Maxwell, author.

http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqm&rft_dat=xri:pqdiss:10826564

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Excerpt:

massive amounts of data. By necessity, memory devices are being created more compactly, leading to higher

Cover image for Spin-Orbit Torque Induced Magnetization Switching in Tungsten/ Thulium Iron Garnet Bilayer

Spin-Orbit Torque Induced Magnetization Switching in Tungsten/ Thulium Iron Garnet Bilayer

12.

Spin-Orbit Torque Induced Magnetization Switching in Tungsten/ Thulium Iron Garnet Bilayer

by

Zhang, Peng, author.

http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqm&rft_dat=xri:pqdiss:10829910

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Excerpt:

potential application in ultralow-power non-volatile memory devices. The past research on SOT based MRAM

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