One and two-dimensional hexagonal boron nitride (h-BN) nanomaterials are wide bandgap semiconductors (~6 eV). This large bandgap is in contrast with their corresponding carbon counterparts, for instance, graphene is metallic while carbon nanotubes are semiconducting or metallic depending upon their tube diameter and chirality. The insulating nature of boron nitride nanotubes (BNNTs) has hindered their application in the electronic field despite the superior physical and chemical properties. Our results have shown that BNNTs functionalized with metallic quantum dots have shown their potential as a tunneling field effect transistors (TFETs) devices. Moreover, BNNTs functionalized with carbon nanotubes (CNTs), and molecular carbon has shown potential as digital switches. In this dissertation, methods of functionalizing BNNTs by metallic quantum dots and carbon nanomaterials are discussed. Furthermore, synthesis of other h-BN nanomaterials has been explored. Using the well-established chemical vapor deposition technique, boron nitride nanosheets (BNNSs) and boron nitride nanoribbons (BNNRs) have been synthesized. Towards the end, an outlook on the synthesis of boron nanomaterial is provided.