The semiconductor industry has perfected the process of manipulating electron charge. The structure of a transistor is based on the formation of a channel between the source and drain when the gate voltage is applied. This time-tested structure is extremely reliable. However, there are several fundamental issues with this structure that need to be addressed. The standard (Complementary Metal Oxide Semiconductor) CMOS has gate control issues and can cause leakage by short channel effect. This occurs when the size of the transistor is scaled down which can cause the leakage and the static power to increase.

Some of the new technologies have a better structure that doesn't leak by nature. This research is focused on Spintronic devices. The research is not concentrating on a direct replacement to CMOS devices but to take advantage of Spintronic devices characteristic to achieve robust and high-performance computing. The idea behind Spintronics is to take advantage of the electron's spin angular momentum to make a device that consumes less power compared to CMOS devices. We utilize this idea in a novel design for (Physical Unclonable functions) PUFs in hardware security which compared to conventional CMOS based not only it is low powered, but it can also be initialized. Spin-based design for a crossbar array to achieve computation in memory is also proposed in this research.