Front Cover; Semiconductors and Semimetals: Infrared Detectors II; Copyright Page; Contents; List of Contributors; Preface; Contents of Previous Volumes; Chapter 1. Operational Characteristics of Infrared Photodetectors; I. Introduction; II. Detector Parameters; III. Figures of Merit; IV. Measurement of Detector Parameters; V. Calculations of Performance for Specific Conditionss; VI. Current State-of-the-Art Photodelectors.; VII. Detectors in Advance of the State-of-the-Art; List of Symbols; Chapter 2. Impurity Germanium and Silicon Infrared Detectors; I. Introduction.

II. Impurities in Germanium and SiliconIII. Impurity Photoconductivity; IV. Device Fabrication; V. Operating Characteristics; VI. Conclusions and Anticipated Future Developments; Chapter 3. lnSb Submillimeter Photoconductive Detectors; I. Physical Principles; II. Description of Detector; III. Performance of Detector; IV. Applications and Future Developments; Appendix. Amplifiers for Use with the InSb Submillimeter Detector; Addendum; Chapter 4. Far-Infrared Photoconductivity in High Purity GaAs; I. General Introduction; II. Material; III. Photoconductivity; IV. Detector Performance.

V. SummaryChapter 5. Avalanche Photodiodes; I. Introduction; II. Avalanche Gain Mechanism; III. Multiplication Noise; IV. Electron and Hole Ionization Coefficients; V. Avalanche Photodiode Detectors; VI. Electroabsorption Avalanche Photodiode Detectors; VII. Summaryand Conclusions; Chapter 6. The Josephson Junction as a Detector of Microwave and Far-Infrared Radiation; I. Introduction; II. The Alternating Current Josephson Effect; III. Real Junctions and Equivalent Circuits; IV. The Junction Impedance; V. Optimum Junctions for Detector Applications; VI. Noise; VII. Bolometer.

VIII. Video DetectorIX. Heterodyne Detector with External Local Oscillator; X. Parametric Amplifier; XI. Other Devices of Interest; XII. Conclusions; Chapter 7. The Pyroelectric Detector-An Update; Author Index; Subject Index.