Silicon carbide, 1968 proceedings.
Başlık:
Silicon carbide, 1968 proceedings.
Yazar:
International Conference on Silicon Carbide (1968 : University Park, Pa.)
ISBN:
9781483152615
Toplantı Adı Girişi:
Yayın Bilgileri:
New York, Pergamon Press, [1969]
Fiziksel Tanımlama:
1 online resource (372 pages) illustrations
İçerik:
CHAPTER 4. THE INFLUENCE OF IMPURITIES ON THE GROWTH OF SILICON CARBIDE CRYSTALS GROWN BY GAS-PHASE REACTIONSIntroduction; Enhancement of growth, and crystal structure; Vapour-Liquid-Solid Growth (V.L.S.); Acknowledgements; References; CHAPTER 5. THE INFLUENCE OF IMPURITIES ON THE GROWTH OF SILICON CARBIDE CRYSTALS BY RECRYSTALLIZATION; Introduction; Recrystallization Below 2000°C; The Influence of Nitrogen and of Ambient Pressures Higher than One Atmosphere; The Influence of Aluminium; The Influence of IIIB Elements; References.
CHAPTER 6. SOME OBSERVATIONS ON SILICON CARBIDE SINGLE CRYSTAL GROWTHSummary; Acknowledgments; References; CHAPTER 7. PRINCIPLES OF SOLUTION AND TRAVELLING SOLVENT GROWTH OF SILICON CARBIDE; Acknowledgment; References; CHAPTER 8. GROWTH OF SILICON CARBIDE FROM SOLUTION; Acknowledgements; References; CHAPTER 9. THE GROWTH OF SiC CRYSTALS FROM VAPOR BY THE BRIDGMAN-STOCKBARGER METHOD; Preparation of the SiC Nutrient; The Changes in Approach; The June 17-19 Sublimation Run; The Results of the June 17-19 Sublimation Run; Acknowledgments; References; CHAPTER 10. BETA SILICON CARBIDE; Background.
ExperimentaiComparison Properties of Alpha and Beta SiC; Discussion; Conclusion; References; CHAPTER 11. HETEROEPITAXY OF BETA SILICON CARBIDE EMPLOYING LIQUID METALS; Introduction; Experimental Procedure; Discussion and Conclusions; Acknowledgements; References; CHAPTER 12. SOME ASPECTS OF DISORDER IN SILICON CARBIDE; Experimental Methods; Experimental Results; Discussion; Conclusions; Acknowledgements; References; CHAPTER 13. DEPENDENCE OF PHYSICAL PROPERTIES ON POLYTYPE STRUCTURE; Introduction; Large Zone Structure; Experimental Results; Correlation with Percent h -- References.
Özet:
Silicon Carbide - 1968 presents the proceedings of the International Conference on Silicon Carbide held in University Park, Pennsylvania on October 20-23, 1968. The book covers papers about the perspectives on silicon carbide; several problems in the development of silicon carbide semiconductors, such as the control of crystal structure and analysis. The thermal properties of beta-silicon carbide from 20 to 2000 degrees and the influence of impurities on the growth of silicon carbide crystals in chemical reactions and by recrystallization are also discussed. The book then presents papers abou.
Elektronik Erişim:
ScienceDirect https://www.sciencedirect.com/science/book/9780080067681Mevcut:*
Yer Numarası | Demirbaş Numarası | Shelf Location | Lokasyon / Statüsü / İade Tarihi |
---|---|---|---|
QD181 .S6 I5 | 1183322-1001 | Elsevier E-Kitap Koleksiyonu | Arıyor... |
On Order
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