Monolithic Integration of III-Nitride Devices by Selective Epitaxial Growth
Başlık:
Monolithic Integration of III-Nitride Devices by Selective Epitaxial Growth
Yazar:
Liu, Chao, author.
ISBN:
9780438130852
Yazar Ek Girişi:
Fiziksel Tanımlama:
1 electronic resource (149 pages)
Genel Not:
Source: Masters Abstracts International, Volume: 57-06M(E).
Advisors: Wei Min Dai.
Özet:
Recent decades have witnessed a booming development of III-nitride optoelectronic devices where a direct tunable bandgap is essential for efficient light emission in the green to ultraviolet regime. Other material characteristics such as high breakdown field strength, large saturated velocity, and excellent electron transport properties of III-nitrides can be exploited for high frequency and high power device applications. Sharing the same material system, monolithic integration of III-nitride devices can enable high-level integrated systems with novel functionalities and improved reliability while trimming size, cost and undesirable parasitics.
In this thesis, monolithic integration of III-nitride devices has been investigated by selective epitaxial growth (SEG). Initial demonstration was obtained by SEG of AlGaN/GaN high electron mobility transistors (HEMTs) on InGaN/GaN light emitting diodes (LEDs) to realize a voltage-controlled light emitter. Later versions feature a metal-interconnection-free laterally integrated HEMT-LED devices. To maximize device performance for both the LED and HEMT, a GaN/AlN buffer platform was developed, with high buffer resistivity and excellent crystalline quality simultaneously. With the GaN/AlN buffer, a high-brightness and low-leakage laterally integrated HEMT-LED was achieved. An Enhancement-mode GaN VMOS-LED integration was also demonstrated for the first time.
With the well-developed buffer platform and selective etching/growth techniques, a monolithically integrated micro-opto-electronic system (MOES) was built. The voltage-controlled light emitter was further integrated with a blue InGaN/GaN multi-quantum-well photodiode and an UV AlGaN/GaN Schottky barrier photodiode. This is the first demonstration of a monolithically integrated voltage-controlled light emitter with dual-wavelength photodiodes on a chip. Afterwards, the well-developed HEMT-LED-PD integration was transferred onto Si substrates, which makes further integration of III-nitride devices with conventional Si ICs possible. This demonstration brings a variety of potential applications, such as smart lighting, on-chip optical interconnect and optical wireless communication.
Notlar:
School code: 1223
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Yer Numarası | Demirbaş Numarası | Shelf Location | Lokasyon / Statüsü / İade Tarihi |
---|---|---|---|
XX(696784.1) | 696784-1001 | Proquest E-Tez Koleksiyonu | Arıyor... |
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