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Behavior of Highly Te doped InGaAs
Başlık:
Behavior of Highly Te doped InGaAs
Yazar:
Kennon, Ethan Lowell, author.
ISBN:
9780438120655
Yazar Ek Girişi:
Fiziksel Tanımlama:
1 electronic resource (165 pages)
Genel Not:
Source: Dissertation Abstracts International, Volume: 79-11(E), Section: B.
Özet:
The exponential growth of semiconductor technology has allowed it to reach the prevalence that we see today. In order for growth to continue, new materials such as InGaAs will be needed, but the contact resistivity of these materials is troublesome. Te doping of InGaAs is a potential solution to this problem, but its behavior is not fully understood. This work studied the electrical deactivation of Te doping in InGaAs, systematically determining the mechanisms that could be involved. Annealing to induce deactivation yielded an activation energy of 2.6 eV for the responsible mechanism. TEM of the layer indicated that the Te was not precipitating, leading to the conclusion that point defects or small clusters were responsible. Marker layer studies, strained deactivation, and implants were used to eliminate interstitial clustering as a possibility, and lend further support to Ga Frenkel pair formation as the deactivation mechanism. DFT calculations of GaAs and InAs confirmed these experimental results, showing Te-V clusters to be the most stable defect, and that vacancy formation cannot be the limiting factor in Te deactivation.
Notlar:
School code: 0070
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Yer Numarası | Demirbaş Numarası | Shelf Location | Lokasyon / Statüsü / İade Tarihi |
---|---|---|---|
XX(696607.1) | 696607-1001 | Proquest E-Tez Koleksiyonu | Arıyor... |
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