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The Effect of Ion Implantation on the Structural and Electronic Properties of Molybdenum Disulfide
Başlık:
The Effect of Ion Implantation on the Structural and Electronic Properties of Molybdenum Disulfide
Yazar:
Murray, Ryan, author.
ISBN:
9780438121980
Yazar Ek Girişi:
Fiziksel Tanımlama:
1 electronic resource (173 pages)
Genel Not:
Source: Dissertation Abstracts International, Volume: 79-11(E), Section: B.
Advisors: Kevin Jones.
Özet:
Molybdenum disulfide (MoS2) and other 2D materials have the potential to both continue Moore's Law and introduce novel electronic device technologies. However, numerous obstacles exist for bringing these unique materials from the lab to the market. For example, the Fermi level at the MoS2/contact interface is pinned near the conduction band, which presents an appreciable barrier for current that results in prohibitively large contact resistances. Additionally, MoS2 is intrinsically n-type, but CMOS technology requires both n- and p-type material. Thus, a reliable and tunable method for doping MoS2 is critical for its successful adoption.
Numerous methods for doping MoS2 have been reported, however they typically involve processes that are incompatible with current industrial fabrication flows. Additionally, the methods often employ surface treatments that do not have the thermally stability to survive the full industrial microelectronic manufacturing process. Ion implantation is a common and well-known industrial process and is investigated here as a doping method for MoS2. Both grown MoS2 films and mineralogical samples are examined. Low implantation energies from 200--500 eV result in projected ranges of 0. --2.1 nanometers, which is within the second and third surface layers. Implanted n-type dopant species include Cl and F, p-type species include P and As, and inert species include Ar and Kr. Implantation doses ranging from 5 x 1012 to 1 x 1015 cm -2 are used. Surface analysis confirms implantation into the surface layers and reveals a strong correlation between surface damage and implantation dose. Activation anneals ranging from 300°--800°C in a H2S atmosphere are employed for both dopant activation and defect repair. Devices fabricated on implanted MoS2 are found to have a reduced on-state drive current relative to an unimplanted, unannealed control sample. Annealing is shown to repair implantation damage and improve device on-state current, however, the current never returns to that of the control sample. Microscopy with atomic resolution reveals implantation-induced defects that are not repaired by H 2S anneals, and implicates them as the source of the degraded device performance.
Notlar:
School code: 0070
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Yer Numarası | Demirbaş Numarası | Shelf Location | Lokasyon / Statüsü / İade Tarihi |
---|---|---|---|
XX(696627.1) | 696627-1001 | Proquest E-Tez Koleksiyonu | Arıyor... |
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