Eylem Seç
Development and Simulation of Germanium P-I-N Infrared Detectors
Başlık:
Development and Simulation of Germanium P-I-N Infrared Detectors
Yazar:
Philippi, Caitlin Rouse, author.
ISBN:
9780355966442
Yazar Ek Girişi:
Fiziksel Tanımlama:
1 electronic resource (114 pages)
Genel Not:
Source: Dissertation Abstracts International, Volume: 79-10(E), Section: B.
Advisors: Harry Efstathiadis Committee members: Hassaram Bakhru; Nathaniel Cady; Christopher Hobbs; John W. Zeller.
Özet:
Important factors for infrared photodetectors are that they are high-performing, low-cost devices. The performance can be characterized through the quantum efficiency, speed and device noise. Germanium (Ge) on silicon (Si) offers a comparable alternative to conventional groups III-V infrared detector materials such as InGaAs, InSb and HgCdTe in order to develop near-infrared (NIR) photodetector devices that operate with a high responsivity and a relatively low dark current without being cooled. As a Group IV material, Ge is compatible with Complementary Metal-Oxide-Semiconductor (CMOS) manufacturing which allows for a high-quality, high-throughput device for minimum cost. As a result of a thermally induced biaxial tensile strain incorporated into the Ge film, the bandgap of the Ge is modulated, and the photodetector's absorption range can be increased to even longer wavelengths (1600 nm range). We have used CMOS processes in order to fabricate Ge based p-i-n NIR photodetector devices on 300 mm Si wafers. P-i-n junctions offer many benefits such as the ability to tune the width of the depletion region and a strong built-in electric field (∼several kV/cm) which can overcome recombination losses and increase response speed. The Ge is deposited in a two-step process to reduce the dislocation density which could form recombination centers and contribute to a higher dark current. Characterization, including TEM, EDS and SIMS, has been done to ensure a quality, crystalline film. We have also performed electrical testing of the device. The device exhibited strong diode behavior as well as an exceptionally low dark current of 1.35 nA. We have developed a model for these devices using Sentaurus TCAD in order to compare our experimental results with theoretical results. Using this model as a baseline, we have simulated a device of a novel design consisting of a lateral, radial p-i-n junction to simultaneously realize an improved quantum efficiency, optimized speed and decreased device noise. The optimal depletion layer width has also been investigated.
Notlar:
School code: 0668
Konu Başlığı:
Tüzel Kişi Ek Girişi:
Mevcut:*
Yer Numarası | Demirbaş Numarası | Shelf Location | Lokasyon / Statüsü / İade Tarihi |
---|---|---|---|
XX(680692.1) | 680692-1001 | Proquest E-Tez Koleksiyonu | Arıyor... |
On Order
Liste seç
Bunu varsayılan liste yap.
Öğeler başarıyla eklendi
Öğeler eklenirken hata oldu. Lütfen tekrar deneyiniz.
:
Select An Item
Data usage warning: You will receive one text message for each title you selected.
Standard text messaging rates apply.