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Stress Characterization of Stretchable Crystalline Semiconductors
Başlık:
Stress Characterization of Stretchable Crystalline Semiconductors
Yazar:
Curtis, Sabrina M., author. (orcid)0000-0002-2979-2799
ISBN:
9780438145900
Yazar Ek Girişi:
Fiziksel Tanımlama:
1 electronic resource (133 pages)
Genel Not:
Source: Masters Abstracts International, Volume: 57-06M(E).
Advisors: Randy P. Tompkins; Nathan Lazarus Committee members: Marina S. Leite; Gary Rubloff.
Özet:
Stretchable crystalline semiconductors are the key to enable wearable high power and energy devices. The work presented in this thesis evaluates the non-uniform surface stress distribution of stretchable Si and GaN serpentine geometries and has yielded the following contributions: (i.) 2D and 3D numerical analyses of the effect of mechanical anisotropy in (100) Si on crystalline stretchable behavior, revealing the direction can be up to 36% more stretchable than the direction, and (0001) GaN has no anisotropic dependence. (ii.) A micro-fabrication procedure which allows for the fabrication and release of stretchable Si into serpentine mechanical test structures which demonstrated an experimental strain-to-rupture of 84%. (iii.) In-situ stress characterization of the non-uniform surface stress distribution in stretchable Si, while applying external strain, using micro-Raman spectroscopy. (iv.) A micro-scale imaging technique to spectrally and spatially resolve the local surface stress distribution in stretchable AlGaN/ GaN high electron mobility transistors.
Notlar:
School code: 0117
Tüzel Kişi Ek Girişi:
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Yer Numarası | Demirbaş Numarası | Shelf Location | Lokasyon / Statüsü / İade Tarihi |
---|---|---|---|
XX(690994.1) | 690994-1001 | Proquest E-Tez Koleksiyonu | Arıyor... |
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