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III-V semiconductor materials and devices
Başlık:
III-V semiconductor materials and devices
Yazar:
Malik, R. J., 1954-
ISBN:
9780444870742
9780444596352
Yayın Bilgileri:
Amsterdam ; New York : North-Holland ; New York, NY USA : Sole distributors for the USA and Canada, Elsevier Science Pub. Co., 1989.
Fiziksel Tanımlama:
1 online resource (xii, 727 pages) : illustrations.
Seri:
Materials processing, theory and practices ; v. 7
Materials processing, theory and practices ; v. 7.
İçerik:
Front Cover; III-V Semiconductor Materials and Devices; Copyright Page; Introduction to the Series; Previous Volumes in The Series; Preface to Volume 7; Table of Contents; ADVISORY BOARD; CHAPTER 1. MELT-GROWTH OF III-V COMPOUNDS BY THE LIQUID ENCAPSULATION AND HORIZONTAL GROWTH TECHNIQUES; 1. Introduction; 2. Melt-growth techniques; 3. Liquid Encapsulation; 4. Horizontal growth; 5. Fundamentals of crystal growth; 6. Crystal quality; Note added in proof; Acknowledgements; References; CHAPTER 2. LIQUID PHASE EPITAXIAL GROWTH; 1. Introduction; 2. Apparatus for multiple-layer LPE
3. Growth of GaAs- AlxGa1-xAs layers4. LPE growth of GalnAsP; References; CHAPTER 3. VAPOR PHASE EPITAXY OF III- V SEMICONDUCTORS; 1. Introduction; 2. Basic system parameters; 3. System processes; 4. System parameter effects; 5. III-V alloys; 6. Summary; References; CHAPTER 4. METALORGANIC CHEMICAL VAPOR DEPOSITION OF III -V SEMICONDUCTORS; 1. Introduction; 2. MOCVD growth processes-basic reactions; 3. AlAs-GaAs materials growth by MOCVD; 4. The InGaAsP materials systems; 5. Other materials systems; 6. Heterostructure devices by MOCVD; 7. Future directions; Acknowledgments; References
CHAPTER 5. MOLECULAR BEAM EPITAXY1. Introduction; 2. MBE systems -- components and their functions; 3. Growth processes and procedures of GaAs and related compounds; 4. Characterization of MBE-grown GaAs, (AlGa)As, and their heterostructures; 5. Growth and properties of various material systems; 6. Concluding remarks and future challenges; Note to the reference list; References; CHAPTER 6. ION IMPLANTATION IN III-V SEMICONDUCTORS; 1. Introduction; 2. General considerations; 3. Parameters that affect implantation results; 4. n-type impurities; 5. p-type impurities; 6. High-resistivity layers
7. Applications8. Conclusions; Acknowledgments; References; CHAPTER 7. CHARACTERIZATION OF III-V SEMICONDUCTORS; 1. Introduction; 2. Optical characterization; 3. Electrical characterization; Note added in proof:; Acknowledgments; References; CHAPTER 8. III-V SEMICONDUCTOR DEVICES; 1. Introduction and material selection; 2. Principles used in devices; 3. Electronic devices; 4. Opto-electronic devices; 5. Sensors; References; References added in proof; SUBJECT INDEX
Özet:
The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.
Konu Başlığı:
Tür:
Added Author:
Başlık Ek Girişi:
3-5 semiconductor materials and devices.
Three-five semiconductor materials and devices.
Elektronik Erişim:
ScienceDirect http://www.sciencedirect.com/science/book/9780444870742 ScienceDirect https://www.sciencedirect.com/science/bookseries/0167790XMevcut:*
Yer Numarası | Demirbaş Numarası | Shelf Location | Lokasyon / Statüsü / İade Tarihi |
---|---|---|---|
TK7871.15 .G3 A14 1989 | 1178377-1001 | Elsevier E-Kitap Koleksiyonu | Arıyor... |
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