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In Situ Extrinsic Doping of CdTe Thin Films for Photovoltaic Applications
Başlık:
In Situ Extrinsic Doping of CdTe Thin Films for Photovoltaic Applications
Yazar:
Khan, Imran Suhrid, author.
ISBN:
9780355988994
Yazar Ek Girişi:
Fiziksel Tanımlama:
1 electronic resource (108 pages)
Genel Not:
Source: Dissertation Abstracts International, Volume: 79-10(E), Section: B.
Advisors: Christos Ferekides Committee members: Richard Gilbert; Andrew Hoff; Don Morel; David Rabson.
Özet:
The Cadmium Telluride thin film solar cell is one of the leading photovoltaic technologies. Efficiency improvements in the past decade made it a very attractive and practical source of renewable energy. Considering the theoretical limit, there is still room for improvement, especially the cell's open circuit voltage (VOC). To improve VOC, the p-type carrier concentration and minority carrier lifetime of the CdTe absorber needs to be improved. Both these parameters are directly related to the point defect distribution of the semiconductor, which is a function of deposition stoichiometry, dopant incorporation and post-deposition treatments.
CdTe films were deposited by the Elemental Vapor Transport (EVT) deposition method, which allowed in situ control of the vapor phase stoichiometry (Cd/Te ratio). Extrinsic doping of polycrystalline CdTe by in situ incorporation of antimony (Sb) and phosphorus (P) was investigated. The structural and electrical properties of CdTe thin films and solar cells were studied. Sb and P incorporation were found to increase the net p-doping concentration. Cl and Sb improved the minority carrier lifetime of polycrystalline CdTe, while lower lifetime with Cu and P doped films were indicated. Deep Level Transient Spectroscopy (DLTS) was performed on devices fabricated with different deposition stoichiometry, post-deposition treatments, and phosphorus dopant dose. Several majority and minority carrier traps were identified, and assigned to different point defects based on first principle studies in the literature and experimental conditions used for the deposition and processing of the thin films.
Notlar:
School code: 0206
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Yer Numarası | Demirbaş Numarası | Shelf Location | Lokasyon / Statüsü / İade Tarihi |
---|---|---|---|
XX(679096.1) | 679096-1001 | Proquest E-Tez Koleksiyonu | Arıyor... |
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