Characterization and Analysis of 10 kV Generation-3 Silicon Carbide Power MOSFET Model
Başlık:
Characterization and Analysis of 10 kV Generation-3 Silicon Carbide Power MOSFET Model
Yazar:
Rengarajan, Satish, author.
Fiziksel Tanımlama:
1 electronic resource (97 pages)
Genel Not:
Source: Masters Abstracts International, Volume: 57-03M(E).
Advisors: Douglas Hopkins; B. Baliga; Subhashish Bhattacharya.
Notlar:
School code: 0155
